Electrical properties of CIGS/Mo junctions as a function of MoSe2 orientation and Na doping
Identifieur interne : 000141 ( Main/Repository ); précédent : 000140; suivant : 000142Electrical properties of CIGS/Mo junctions as a function of MoSe2 orientation and Na doping
Auteurs : RBID : Pascal:14-0026986Descripteurs français
- Pascal (Inist)
- Caractéristique électrique, Dopage, Problème inverse, Méthode TLM, Résistance contact, Résistivité couche, Dépendance température, Effet température, Hauteur barrière, Etude comparative, Matériau dopé, Cellule couche mince, Cellule solaire, Molybdène, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Oxyde de silicium, Verre, Cu(In,Ga)Se2, SiOx.
- Wicri :
English descriptors
- KwdEn :
- Barrier height, Comparative study, Contact resistance, Copper selenides, Doped materials, Doping, Electrical characteristic, Gallium selenides, Glass, Indium selenides, Inverse problem, Molybdenum, Quaternary compound, Sheet resistivity, Silicon oxides, Solar cell, TLM method, Temperature dependence, Temperature effect, Thin film cell.
Abstract
The electrical properties of Cu(In,Ga)Se2/Mo junctions were characterized with respect of MoSe2 orientation and Na doping level using an inverse transmission line method, in which the Cu(In,Ga)Se2 (CIGS)/Mo contact resistance could be measured separately from the CIGS film sheet resistance. The MoSe2 orientation was controlled by varying the Mo surface density, with the c-axis parallel and normal orientations favored on Mo surfaces of lower and higher density, respectively. The effect of Na doping was compared by using samples with and without a SiOx film on sodalime glass. The conversion of the MoSe2 orientation from c-axis normal to parallel produced a twofold reduction in CIGS/Mo contact resistance. Measurements of the contact resistances as a function of temperature showed that the difference in CIGS/Mo contact resistance between the samples with different MoSe2 orientations was due to different barrier heights at the back contact. Comparison between Na-doped and Na-reduced samples revealed that the contact resistance for the Na-reduced system was four times of that of the doped sample, which showed more pronounced Schottky-junction behavior at lower temperature, indicating that Na doping effectively reduced the barrier height at the back contact.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical properties of CIGS/Mo junctions as a function of MoSe<sub>2</sub> orientation and Na doping</title><author><name sortKey="Yoon, Ju Heon" uniqKey="Yoon J">Ju-Heon Yoon</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Korea Institute of Science and Technology (KIST)</s1><s2>Seoul 136-791</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, College of Engineering, Korea University</s1><s2>Seoul 136-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Kim, Jun Ho" uniqKey="Kim J">Jun-Ho Kim</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, College of Engineering, Korea University</s1><s2>Seoul 136-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name>WON MOK KIM</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Korea Institute of Science and Technology (KIST)</s1><s2>Seoul 136-791</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Park, Jong Keuk" uniqKey="Park J">Jong-Keuk Park</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Korea Institute of Science and Technology (KIST)</s1><s2>Seoul 136-791</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Baik, Young Joon" uniqKey="Baik Y">Young-Joon Baik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Korea Institute of Science and Technology (KIST)</s1><s2>Seoul 136-791</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Seong, Tae Yeon" uniqKey="Seong T">Tae-Yeon Seong</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, College of Engineering, Korea University</s1><s2>Seoul 136-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Jeong, Jeung Hyun" uniqKey="Jeong J">Jeung-Hyun Jeong</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Korea Institute of Science and Technology (KIST)</s1><s2>Seoul 136-791</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0026986</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0026986 INIST</idno><idno type="RBID">Pascal:14-0026986</idno><idno type="wicri:Area/Main/Corpus">000264</idno><idno type="wicri:Area/Main/Repository">000141</idno></publicationStmt><seriesStmt><idno type="ISSN">1062-7995</idno><title level="j" type="abbreviated">Prog. photovolt. : (Print)</title><title level="j" type="main">Progress in photovoltaics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barrier height</term><term>Comparative study</term><term>Contact resistance</term><term>Copper selenides</term><term>Doped materials</term><term>Doping</term><term>Electrical characteristic</term><term>Gallium selenides</term><term>Glass</term><term>Indium selenides</term><term>Inverse problem</term><term>Molybdenum</term><term>Quaternary compound</term><term>Sheet resistivity</term><term>Silicon oxides</term><term>Solar cell</term><term>TLM method</term><term>Temperature dependence</term><term>Temperature effect</term><term>Thin film cell</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique électrique</term><term>Dopage</term><term>Problème inverse</term><term>Méthode TLM</term><term>Résistance contact</term><term>Résistivité couche</term><term>Dépendance température</term><term>Effet température</term><term>Hauteur barrière</term><term>Etude comparative</term><term>Matériau dopé</term><term>Cellule couche mince</term><term>Cellule solaire</term><term>Molybdène</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>Composé quaternaire</term><term>Oxyde de silicium</term><term>Verre</term><term>Cu(In,Ga)Se2</term><term>SiOx</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term><term>Molybdène</term><term>Verre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The electrical properties of Cu(In,Ga)Se<sub>2</sub>/Mo junctions were characterized with respect of MoSe<sub>2</sub> orientation and Na doping level using an inverse transmission line method, in which the Cu(In,Ga)Se<sub>2</sub> (CIGS)/Mo contact resistance could be measured separately from the CIGS film sheet resistance. The MoSe<sub>2</sub> orientation was controlled by varying the Mo surface density, with the c-axis parallel and normal orientations favored on Mo surfaces of lower and higher density, respectively. The effect of Na doping was compared by using samples with and without a SiO<sub>x</sub> film on sodalime glass. The conversion of the MoSe<sub>2</sub> orientation from c-axis normal to parallel produced a twofold reduction in CIGS/Mo contact resistance. Measurements of the contact resistances as a function of temperature showed that the difference in CIGS/Mo contact resistance between the samples with different MoSe<sub>2</sub> orientations was due to different barrier heights at the back contact. Comparison between Na-doped and Na-reduced samples revealed that the contact resistance for the Na-reduced system was four times of that of the doped sample, which showed more pronounced Schottky-junction behavior at lower temperature, indicating that Na doping effectively reduced the barrier height at the back contact.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1062-7995</s0></fA01><fA03 i2="1"><s0>Prog. photovolt. : (Print)</s0></fA03><fA05><s2>22</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electrical properties of CIGS/Mo junctions as a function of MoSe<sub>2</sub> orientation and Na doping</s1></fA08><fA11 i1="01" i2="1"><s1>YOON (Ju-Heon)</s1></fA11><fA11 i1="02" i2="1"><s1>KIM (Jun-Ho)</s1></fA11><fA11 i1="03" i2="1"><s1>WON MOK KIM</s1></fA11><fA11 i1="04" i2="1"><s1>PARK (Jong-Keuk)</s1></fA11><fA11 i1="05" i2="1"><s1>BAIK (Young-Joon)</s1></fA11><fA11 i1="06" i2="1"><s1>SEONG (Tae-Yeon)</s1></fA11><fA11 i1="07" i2="1"><s1>JEONG (Jeung-Hyun)</s1></fA11><fA14 i1="01"><s1>Korea Institute of Science and Technology (KIST)</s1><s2>Seoul 136-791</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Materials Science and Engineering, College of Engineering, Korea University</s1><s2>Seoul 136-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>90-96</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26755</s2><s5>354000500724620120</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0026986</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Progress in photovoltaics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The electrical properties of Cu(In,Ga)Se<sub>2</sub>/Mo junctions were characterized with respect of MoSe<sub>2</sub> orientation and Na doping level using an inverse transmission line method, in which the Cu(In,Ga)Se<sub>2</sub> (CIGS)/Mo contact resistance could be measured separately from the CIGS film sheet resistance. The MoSe<sub>2</sub> orientation was controlled by varying the Mo surface density, with the c-axis parallel and normal orientations favored on Mo surfaces of lower and higher density, respectively. The effect of Na doping was compared by using samples with and without a SiO<sub>x</sub> film on sodalime glass. The conversion of the MoSe<sub>2</sub> orientation from c-axis normal to parallel produced a twofold reduction in CIGS/Mo contact resistance. Measurements of the contact resistances as a function of temperature showed that the difference in CIGS/Mo contact resistance between the samples with different MoSe<sub>2</sub> orientations was due to different barrier heights at the back contact. Comparison between Na-doped and Na-reduced samples revealed that the contact resistance for the Na-reduced system was four times of that of the doped sample, which showed more pronounced Schottky-junction behavior at lower temperature, indicating that Na doping effectively reduced the barrier height at the back contact.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Dopage</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Doping</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Doping</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Problème inverse</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Inverse problem</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Problema inverso</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Méthode TLM</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>TLM method</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Método TLM</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Résistance contact</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Contact resistance</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Resistencia contacto</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Résistivité couche</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Sheet resistivity</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Resistividad capa</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Dépendance température</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Effet température</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Temperature effect</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Efecto temperatura</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Hauteur barrière</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Barrier height</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Altura barrera</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Etude comparative</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Comparative study</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Estudio comparativo</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Doped materials</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Cellule couche mince</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Thin film cell</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Célula capa delgada</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Solar cell</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Célula solar</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Molybdène</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Molybdenum</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Molibdeno</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Composé quaternaire</s0><s5>26</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Quaternary compound</s0><s5>26</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Compuesto cuaternario</s0><s5>26</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Oxyde de silicium</s0><s2>NK</s2><s5>27</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Silicon oxides</s0><s2>NK</s2><s5>27</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Verre</s0><s5>28</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Glass</s0><s5>28</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Vidrio</s0><s5>28</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Cu(In,Ga)Se2</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>SiOx</s0><s4>INC</s4><s5>83</s5></fC03><fN21><s1>027</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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